TY - JOUR AU - Zinovchuk, A. V. AU - Sevost’yanov, E. A. PY - 2020/03/03 Y2 - 2024/03/29 TI - Influence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys JF - Ukrainian Journal of Physics JA - Ukr. J. Phys. VL - 65 IS - 2 SE - Semiconductors and dielectrics DO - 10.15407/ujpe65.2.157 UR - https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019407 SP - 157 AB - <p>The influence of the atomic disorder on the Auger recombination rate in p-InGaN alloys has been studied. The disorder was simulated using a 4 × 4 × 4 supercell in which In and Ga atoms taken in a required stoichiometric ratio were randomly distributed over the supercell sites. A comparison between the Auger recombination rates calculated in the framework of the supercell and virtual-crystal approximations showed that a large number of allowed interband transitions induced by the atomic disorder strongly increases the Auger recombination rate in wide-band-gap p-InGaN alloys.</p> ER -