TY - JOUR AU - Bilanych, B. V. AU - Shylenko, O. AU - Latyshev, V. M. AU - Feher, A. AU - Bilanych, V. S. AU - Rizak, V. M. AU - Komanicky, V. PY - 2020/03/26 Y2 - 2024/03/29 TI - Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists JF - Ukrainian Journal of Physics JA - Ukr. J. Phys. VL - 65 IS - 3 SE - Surface physics DO - 10.15407/ujpe65.3.247 UR - https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019391 SP - 247 AB - <p>The interaction of an electron beam with chalcogenide films As<sub>4</sub>Se<sub>96</sub> has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 10<sup>3</sup>–9,3 · 10<sup>7</sup> мC· cm<sup>−2&nbsp;</sup>is established. The parameters of the interaction of a film As<sub>4</sub>Se<sub>96</sub> with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As<sub>4</sub>Se<sub>96</sub> film.</p> ER -