TY - JOUR AU - Neimash, V. B. AU - Nikolenko, A. S. AU - Strelchuk, V. V. AU - Shepelyavyi, P. Ye. AU - Litvinchuk, P. M. AU - Melnyk, V. V. AU - Olkhovyk, I. V. PY - 2019/08/02 Y2 - 2024/03/28 TI - Influence of Laser Light on the Formation and Properties of Silicon Nanocrystals in a-Si/Sn Layered Structures JF - Ukrainian Journal of Physics JA - Ukr. J. Phys. VL - 64 IS - 6 SE - Semiconductors and dielectrics DO - 10.15407/ujpe64.6.522 UR - https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019324 SP - 522 AB - <p>The influence of the laser light intensity and the temperature on the tin-induced crystallization of amorphous silicon has been studied using the Raman screening and optical microscopy methods. The existence of non-thermal mechanisms giving rise to the influence of laser light on the formation of silicon nanocrystals and their Raman spectra is demonstrated experimentally. The photoionization of silicon and the electron-phonon interaction are considered as possible origins of the detected effects. The prospects of their application in new technologies for producing nano-silicon films used in solar cells are discussed.</p> ER -