TY - JOUR AU - Klyui, N. I. AU - Liptuga, A. I. AU - Lozinskii, V. B. AU - Oksanich, A. P. AU - Pritchin, S. E. AU - Fomovskii, F. V. AU - Yukhymchuk, V. O. PY - 2018/10/28 Y2 - 2024/03/29 TI - Tellurium Effect on Degradation Stability of Semiinsulating Gallium Arsenide Crystals JF - Ukrainian Journal of Physics JA - Ukr. J. Phys. VL - 59 IS - 11 SE - Solid matter DO - 10.15407/ujpe59.11.1093 UR - https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018552 SP - 1093 AB - <p>Initial untreated crystals of semiinsulating tellurium-compensated GaAs are shown to degrade considerably less after HF treatments in comparison with the corresponding specimens doped with chrome, which testifies to a substantial influence of the compensating impurity type on the substance degradation stability. Semiinsulating tellurium-compensated GaAs crystals preliminary treated in hydrogen plasma are also found to have higher degradation stability with<br>respect to the action of long-term high-frequency and microwave treatments in comparison with raw crystals.</p> ER -