TY - JOUR AU - Litovchenko, N. M. AU - Korbutyak, D. V. AU - Strilchuk, O. M. PY - 2018/10/06 Y2 - 2024/03/29 TI - Excitonic Parameters of InxGa1-xAs-GaAs Heterostructures with Quantum Wells at Low Temperatures JF - Ukrainian Journal of Physics JA - Ukr. J. Phys. VL - 58 IS - 3 SE - Nanosystems DO - 10.15407/ujpe58.03.0260 UR - https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018291 SP - 260 AB - <p>Characteristics of GaAs/InxGa1 xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experimentally obtained temperature dependences of the energy position of the PL band maximum, hmax, band half-width, W0, and intensity, I, are examined. The values of energy of local phonons, Eph, exciton binding energy, Eex, and the Huang–Rhys factor, N, are determined. A comparison between the values obtained for those quantities and the growth parameters of considered specimens allowed us to assert that the highest-quality specimens are those that are characterized by low N values and one-mode phonon spectra.</p> ER -