@article{Lysenko_Kondratenko_Kozyrev_Rubezhanska_Kladko_Gomeniuk_Gudymenko_Melnichuk_Grenet_Blanchard_2021, title={Morphology and Optical Properties of Tetragonal Ge Nanoclusters Grown on Chemically Oxidized Si(100) Surfaces}, volume={57}, url={https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021152}, DOI={10.15407/ujpe57.11.1132}, abstractNote={<p>Germanium (Ge) nanoclusters are grown by the molecular-beam epitaxy technique on a chemically oxidized Si(100) surface at 700 ºC. X-ray diffraction and photocurrent spectroscopy demonstrate that the nanoclusters have the local structure of body-centered-tetragonal Ge, which exhibits an optical adsorption<br>edge at 0.48 eV at 50 K. Deposition of silicon on the surface with Ge nanoclusters leads to the surface reconstruction and the formation of a polycrystalline diamond-like Si coverage, while the nanoclusters core becomes a tetragonal SiGe alloy. The intrinsic absorption edge is shifted to 0.73 eV due to the Si–Ge intermixing. Possible mechanisms for nanoclusters growth are discussed.</p>}, number={11}, journal={Ukrainian Journal of Physics}, author={Lysenko В.С. and Kondratenko С.В. and Kozyrev Ю.М. and Rubezhanska М.Ю. and Kladko В.П. and Gomeniuk Ю.В. and Gudymenko О.Й. and Melnichuk Є.Є. and Grenet Ж. and Blanchard Н.Б.}, year={2021}, month={Dec.}, pages={1132} }