@article{Bilanych_Shylenko_Latyshev_Feher_Bilanych_Rizak_Komanicky_2020, title={Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists}, volume={65}, url={https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019391}, DOI={10.15407/ujpe65.3.247}, abstractNote={<p>The interaction of an electron beam with chalcogenide films As<sub>4</sub>Se<sub>96</sub> has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 10<sup>3</sup>–9,3 · 10<sup>7</sup> мC· cm<sup>−2 </sup>is established. The parameters of the interaction of a film As<sub>4</sub>Se<sub>96</sub> with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As<sub>4</sub>Se<sub>96</sub> film.</p>}, number={3}, journal={Ukrainian Journal of Physics}, author={Bilanych, B. V. and Shylenko, O. and Latyshev, V. M. and Feher, A. and Bilanych, V. S. and Rizak, V. M. and Komanicky, V.}, year={2020}, month={Mar.}, pages={247} }