@article{Neimash_Dovbeshko_Shepelyavyi_Danko_Melnyk_Isaiev_Kuzmich_2019, title={Raman Scattering in the Process of Tin-Induced Crystallization of Amorphous Silicon}, volume={61}, url={https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019115}, DOI={10.15407/ujpe61.02.0143}, abstractNote={<p>Metal-induced crystallization in Si–Sn–Si thin film structures has been studied, by using the Raman scattering at various light powers. The Raman spectra are used to monitor the temperature, size, and concentration of Si crystals formed in the amorphous Si matrix. A significant acceleration of the metal-induced crystallization in Si–Sn–Si structures at their laser-assisted annealing in comparison with their annealing in dark is revealed. A basic possibility of the “on line” monitoring of the size and the concentration of Si nanocrystals in the course of their formation is demonstrated.</p>}, number={2}, journal={Ukrainian Journal of Physics}, author={Neimash, V. and Dovbeshko, G. and Shepelyavyi, P. and Danko, V. and Melnyk, V. and Isaiev, M. and Kuzmich, A.}, year={2019}, month={Jan.}, pages={143} }