@article{Gentsar_Vlasenko_Levytskyi_2018, title={Laser-Stimulated Enhancement of the Reflectance of Single-Crystalline n-GaAs(100)}, volume={62}, url={https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018608}, DOI={10.15407/ujpe62.11.0953}, abstractNote={<p>The results of optical researches concerning the reflection spectra of n-GaAs(100) single crystals with a specific resistance of 10 Ωcm (at room temperature) measured in a light wave-length interval of 0.2–1.7 мm before and after the laser irradiation to an energy dose of 66–108 mJ/cm2 are reported. The experiment revealed a growth in the reflectance of the examined crystals after their laser treatment. This integral effect is explained as a result of the difference between the optical characteristics (the complex refractive index) in the near-surface layer and in the bulk of the irradiated material.</p>}, number={11}, journal={Ukrainian Journal of Physics}, author={Gentsar, P. O. and Vlasenko, O. I. and Levytskyi, S. M.}, year={2018}, month={Dec.}, pages={953} }