@article{Klyui_Liptuga_Lozinskii_Oksanich_Pritchin_Fomovskii_Yukhymchuk_2018, title={Tellurium Effect on Degradation Stability of Semiinsulating Gallium Arsenide Crystals}, volume={59}, url={https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018552}, DOI={10.15407/ujpe59.11.1093}, abstractNote={<p>Initial untreated crystals of semiinsulating tellurium-compensated GaAs are shown to degrade considerably less after HF treatments in comparison with the corresponding specimens doped with chrome, which testifies to a substantial influence of the compensating impurity type on the substance degradation stability. Semiinsulating tellurium-compensated GaAs crystals preliminary treated in hydrogen plasma are also found to have higher degradation stability with<br>respect to the action of long-term high-frequency and microwave treatments in comparison with raw crystals.</p>}, number={11}, journal={Ukrainian Journal of Physics}, author={Klyui, N. I. and Liptuga, A. I. and Lozinskii, V. B. and Oksanich, A. P. and Pritchin, S. E. and Fomovskii, F. V. and Yukhymchuk, V. O.}, year={2018}, month={Oct.}, pages={1093} }