@article{Kras’ko_2018, title={Influence of Tin Impurity on Degradation of Conductivity in Electron-Irradiated n-Si}, volume={58}, url={https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018289}, DOI={10.15407/ujpe58.03.0243}, abstractNote={<p>The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effect is more pronounced in high-resistance samples, whereas the rates of electron removal from low-resistance ones are almost identical in both materials. This fact can be explained by the difference between the formation efficiency of main compensating radiation- induced defects in n-Si doped with Sn (SnV and VP complexes) and undoped n-Si (mainly, VP complexes), which depends of the concentration of phosphorus in the samples.</p>}, number={3}, journal={Ukrainian Journal of Physics}, author={Kras’ko, M. M.}, year={2018}, month={Oct.}, pages={243} }