Recombination and Trapping of Excess Carriers in n-InSb

V.V. Tetyorkin; A.I. Tkachuk; I.G. Lutsyshyn

doi:10.15407/ujpe69.1.45

Recombination and Trapping of Excess Carriers in n-InSb

Authors

V.V. Tetyorkin V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
A.I. Tkachuk Volodymyr Vynnychenko Central Ukrainian State University
I.G. Lutsyshyn V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe69.1.45

Keywords:

InSb, lifetime, recombination and trapping effects, infrared photodiodes

Abstract

The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n-type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transient and steady-state lifetimes is explained by the trapping of minority carriers at the acceptor centers within the two-level recombination model. The recombination parameters of the traps are estimated.

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Published

2024-02-06

How to Cite

Tetyorkin, V., Tkachuk, A., & Lutsyshyn, I. (2024). Recombination and Trapping of Excess Carriers in n-InSb. Ukrainian Journal of Physics, 69(1), 45. https://doi.org/10.15407/ujpe69.1.45

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Issue

Vol. 69 No. 1 (2024)

Section

Semiconductors and dielectrics

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