Recombination and Trapping of Excess Carriers in n-InSb


  • V.V. Tetyorkin V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • A.I. Tkachuk Volodymyr Vynnychenko Central Ukrainian State University
  • I.G. Lutsyshyn V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine



InSb, lifetime, recombination and trapping effects, infrared photodiodes


The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n-type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transient and steady-state lifetimes is explained by the trapping of minority carriers at the acceptor centers within the two-level recombination model. The recombination parameters of the traps are estimated.


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How to Cite

Tetyorkin, V., Tkachuk, A., & Lutsyshyn, I. (2024). Recombination and Trapping of Excess Carriers in n-InSb. Ukrainian Journal of Physics, 69(1), 45.



Semiconductors and dielectrics