Reduction of Recombination Losses in Near-Sur¬face Diffusion Emitter Layers of Photosensitive Silicon n+-p-p+ Structures


  • V.P. Kostylyov V. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • A.V. Sachenko V. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • T.V. Slusar V. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V.V. Chernenko V. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine



photosensitive silicon structure, near-surface layer, emitter, recombination losses, heat treatments, silicon dioxide layer


When creating an n+-emitter in photosensitive structures of the n+-p-p+ type, the structure of its near-surface layer after the diffusion operation is found to be substantially damaged with increased recombination losses. The influence of additional growing-etching cycles of the silicon dioxide layer on the emitter surface when manufacturing such photosensitive silicon structures on their photoelectric and recombination characteristics is studied. It is shown that the application of such an additional treatment in the production of photosensitive silicon structures allows the recombination losses to be effectively reduced and, thereby, the photovoltaic parameters of such structures, including their spectral and threshold photosensitivities, to be significantly improved.


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How to Cite

Kostylyov, V., Sachenko, A., Slusar, T., & Chernenko, V. (2023). Reduction of Recombination Losses in Near-Sur¬face Diffusion Emitter Layers of Photosensitive Silicon n+-p-p+ Structures. Ukrainian Journal of Physics, 68(9), 628.



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