Features of Mechanisms of Electrical Conductivity in Semiconductive Solid Solution Lu1 – xScxNiSb

V.V. Romaka; V.A. Romaka; Y.V. Stadnyk; L.P. Romaka; P.Y. Demchenko; V.Z. Pashkevych; A.M. Horyn

doi:10.15407/ujpe67.5.370

Features of Mechanisms of Electrical Conductivity in Semiconductive Solid Solution Lu1 – xScxNiSb

Authors

V.V. Romaka Technische Universit¨at Dresden
V.A. Romaka Lviv Polytechnic National University
Y.V. Stadnyk Ivan Franko National University of Lviv
L.P. Romaka Ivan Franko National University of Lviv
P.Y. Demchenko Ivan Franko National University of Lviv
V.Z. Pashkevych Lviv Polytechnic National University
A.M. Horyn Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15407/ujpe67.5.370

Keywords:

electrical conductivity, thermopower coefficient, Fermi level, semiconductor

Abstract

A comprehensive study of the crystal and electronic structures, thermodynamic, electrokinetic, energy, and magnetic properties of the semiconductive solid solution Lu_1-xSc_xNiSb, x = 0 – 0.10, revealed the possibility of doping Sc atoms of different crystallographic sites depending on their concentration. This leads to the generation of structural defects of donor and/or acceptor nature and the appearance of the corresponding energy levels (bands) in the band gap є_g. The ratio of ionized donors and acceptors (degree of compensation) determines the position of the Fermi level є_F in Lu_1-xSc_xNiSb. The dependence of the rate of generation of energy levels and the position of the Fermi level є_F on the impurity concentration Sc, which determines the mechanism of electrical conductivity of Lu_1-xSc_xNiSb, is established. The investigated Lu_1-xSc_xNiSb solid solution is a promising thermoelectric material.

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Published

2022-08-29

How to Cite

Romaka, V., Romaka, V., Stadnyk, Y., Romaka, L., Demchenko, P., Pashkevych, V., & Horyn, A. (2022). Features of Mechanisms of Electrical Conductivity in Semiconductive Solid Solution Lu1 – xScxNiSb. Ukrainian Journal of Physics, 67(5), 370. https://doi.org/10.15407/ujpe67.5.370

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Issue

Vol. 67 No. 5 (2022)

Section

Semiconductors and dielectrics

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