Influence of Uniaxial Deformation on the Filling of the Level Associated with A-center in n-Si Crystals


  • A.V. Fedosov Luts'k National Technical University
  • S.V. Luniov Luts'k National Technical University
  • S.A. Fedosov Lesya Ukrainka Volyn National University





Single crystals of n-Si with the initial charge carrier concentration of 1.24 × 1014 cm–3 which were irradiated with Co60γ-quanta to a dose of 3.8 × 1017 quantum/cm2 have been studied. The piezoresistance of γ-irradiated n-Si crystals has been
measured in the case where X ║ J ║ [100] and X ║ J ║ [110]. The technique of calculations of the drift rate is presented, and the filling degree α of deep levels is estimated. The variation of the energy gap between the deep energy level E0.17 eV and the lower valleys in the conduction band in n-Si crystals induced by an uniaxial elastic deformation along the crystallographic directions [100] and [110] is calculated. The average value of the coefficient α is determined at various temperatures.


I.D. Konozenko, A.K. Semenyuk, and V.I. Hivrich, Radiation-Induced Effects in Silicon (Kyiv, Naukova Dumka, 1974) (in Russian).

A.K. Semenyuk, Radiation-Induced Effects in Multivalley Semiconductors (Nadstyr'ya, Luts'k, 2001) (in Ukrainian).

P.I. Baranskii, I.S. Buda, I.V. Dakhovskii, and V.V. Kolomoets, Electrical and Galvano-Magnetic Phenomena in Anisotropic Semiconductors (Kyiv, Naukova Dumka, 1977) (in Russian).

A.V. Fedosov, S.V. Luniov, and S.A. Fedosov, Ukr. Fiz. Zh. 55, 323 (2010).

A.V. Fedosov, S.V. Luniov, D.A. Zakharchuk, S.A. Fedosov, and V.S. Tymoshchuk, Nauk. Visn. Volyn. Nats. Univ. Ser. Fiz. Nauky 18, 54 (2008).

P.I. Barans'kyi, A.V. Fedosov, and G.P. Gaidar, Physical Properties of Silicon and Germanium Crystals in Fields of Efective External Infuence (Nadstyr'ya, Luts'k, 2000) (in Ukrainian).

K. Seeger, Semiconductor Physics: An Introduction (Springer, Berlin, 1999).

G.L. Bir and G.E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).



How to Cite

Fedosov А., Luniov С., & Fedosov С. (2022). Influence of Uniaxial Deformation on the Filling of the Level Associated with A-center in n-Si Crystals. Ukrainian Journal of Physics, 56(1), 69.



Solid matter