Influence of Uniaxial Deformation on the Filling of the Level Associated with A-center in n-Si Crystals
DOI:
https://doi.org/10.15407/ujpe56.1.69Keywords:
-Abstract
Single crystals of n-Si with the initial charge carrier concentration of 1.24 × 1014 cm–3 which were irradiated with Co60γ-quanta to a dose of 3.8 × 1017 quantum/cm2 have been studied. The piezoresistance of γ-irradiated n-Si crystals has been
measured in the case where X ║ J ║ [100] and X ║ J ║ [110]. The technique of calculations of the drift rate is presented, and the filling degree α of deep levels is estimated. The variation of the energy gap between the deep energy level EC – 0.17 eV and the lower valleys in the conduction band in n-Si crystals induced by an uniaxial elastic deformation along the crystallographic directions [100] and [110] is calculated. The average value of the coefficient α is determined at various temperatures.
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