Surface Photovoltage of Au−C60−Si Structures


  • V.V. Kozachenko Taras Shevchenko National University of Kyiv, Faculty of Physics
  • S.V. Kondratenko Taras Shevchenko National University of Kyiv, Faculty of Physics
  • Ye.Ye. Melnichuk Taras Shevchenko National University of Kyiv, Faculty of Physics
  • O.I. Datsenko Taras Shevchenko National University of Kyiv, Faculty of Physics
  • Z.F. Tsibrii V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine





The methods of surface photovoltage, photoluminescence, AFM, and FTIR are applied to studying the Au–C60–Si structure. The surface photovoltage kinetics was also investigated. It is shown that the photoluminescence and the surface photovoltage in the range 1.3–1.8 eV are caused by optical transitions with participation of singlet and triplet exciton states. It is established that the
generation of surface photovoltage in the Au–C60–Si structure is caused by the spatial separation of electron-hole pairs in the
C60 film.


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How to Cite

Kozachenko В., Kondratenko С., Melnichuk Є., Datsenko О., & Tsibrii З. (2022). Surface Photovoltage of Au−C60−Si Structures. Ukrainian Journal of Physics, 56(3), 263.



Solid matter