Mechanism of Annealing of VO Defects in n-Si Under Pulse Electron Irradiation at High-Temperatures
DOI:
https://doi.org/10.15407/ujpe56.9.922Keywords:
-Abstract
We study the kinetics of accumulation of vacancy-oxygen (VO) complexes in Czochralski-grown (Cz) n-Si, at various intensities of pulse 1 MeV electron radiation at temperatures higher than the temperature of the onset of the thermal annealing of VO (T ≥ 300 ºC). It is shown that the irradiation with electrons at such temperatures causes the accelerated annealing of VO created by this radiation. The accelerated annealing of VO occurs during the action of a pulse of electrons. The maximum concentration of created VO increases with the radiation intensity and decreases, as the temperature of irradiated specimens increases. We propose a model of the process of accelerated annealing which is based on the assumption that specimen's electrons under the electron irradiation are excited in a high-energy valley. At the capture of such electrons by VO defects, the defects receive the energy which decreases essentially the energy of activation of their annealing. The high-energy threshold of the effect depends on the radiation intensity and increases with it.
References
M.M. Kras'ko, A.M. Kraitchinskii, A.G. Kolosyuk, V.B. Neimash, V.A. Makara, R.V. Petrunya, V.Yu. Povarchuk, and V.V. Voytovych, Ukr. J. Phys. 55, 793 (2010).
J.-G. Xu, F. Lu, and H.-H. Sun, Phys. Rev. B 38, 3395 (1988).
https://doi.org/10.1103/PhysRevB.38.3395
J. Lalita, B.G. Svensson, and C. Jagadich, Nucl. Instr. and Meth. in Phys. Res. B 96, 210 (1995).
https://doi.org/10.1016/0168-583X(94)00484-6
E. Simoen, J.M. Rafi, C. Claeys, V. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tishchenko, V. Voytovych, J. Versluys, and P. Clauws, Jpn. J. Appl. Phys. 42, 7184 (2003).
https://doi.org/10.1143/JJAP.42.7184
E. Simoen, C. Claeys, V. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tishchenko, and V. Voytovych, Sol. St. Phenom. 95-96, 367 (2004).
https://doi.org/10.4028/www.scientific.net/SSP.95-96.367
V. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, V. Tishchenko, E. Simoen, J.M. Rafi, C. Claeys, J. Versluys, O. De Gryse, and P. Clauws, Phys. Stat. Sol. (a) 201, 509 (2004).
https://doi.org/10.1002/pssa.200306750
V.P. Markevich, A.R. Peaker, S.B. Lastovskii, V.E. Gusakov, I.F. Medvedeva, and L.I. Murin, Sol. St. Phenom. 156-158, 299 (2010).
https://doi.org/10.4028/www.scientific.net/SSP.156-158.299
J.C. Bourgoin and J.W. Corbett, Phys. Lett. A 38, 135 (1972).
https://doi.org/10.1016/0375-9601(72)90523-3
V.S. Vavilov, N.P. Kekelidze, and L.S. Smirnov, Action of Radiation on Semiconductors (Nauka, Moscow, 1982) (in Russian).
R.A. Smith, Semiconductors, (Cambridge Univ. Press, London, 1979).
A.S. Zubrilov and S.V. Kaveshnikov, Fiz. Tekhn. Polupr. 25, 1332 (1991).
V.N. Abakumov, V.I. Perel', and I.N. Yassievich, Fiz. Tekhn. Polupr. 12, 3 (1978).
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