Analytical and Numerical Calculations of Photoconductivity in Porous Silicon

Authors

  • L.S. Monastyrskii Ivan Franko National University of Lviv
  • B.S. Sokolovskii Ivan Franko National University of Lviv
  • M.R. Pavlyuk Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15407/ujpe56.9.902

Keywords:

-

Abstract

The results of analytical and numerical calculations of photoconductivity in porous silicon with spherical and cylindrical pores are reported. The dependence of photoconductivity on the surface recombination rate has been analyzed for various pore radii, r0, and various average distances between pores, 2R. The photoconductivity of porous silicon increases with the distance between pores and decreases, as the pore radius or the surface recombination rate grows. In the case of small R/r0 ratios, there is a significant discrepancy between the results of analytical calculations and those obtained numerically within the finite element method. The discrepancy was reduced to 1% by introducing a correction coefficient into the analytical expression.

References

D.I. Bilenko, O.Yu. Belobrovaya, E.A. Zharikova, D.B. Terin, and E.I. Khasina, Fiz. Tekh. Poluprovodn. 39, 834 (2005).

https://doi.org/10.1134/1.1992638

A. Bratkowski, F. Korcala, Z. Lukasik, P. Borowski, and W. Bal, Opto-Electron. Rev. 13, 35 (2005).

C. Baratto, G. Faglia, G. Sberveglieri et al., Sensors 2, 121 (2002).

https://doi.org/10.3390/s20300121

S.-J. Kim, J.-Y. Park, S.-H. Lee, and S.-H. Yi, J. Phys. D 33, 1781 (2000).

https://doi.org/10.1088/0022-3727/33/15/305

L. Kaifeng, W. Yumin, Z. Lei et al., Chin. Phys. Lett. 11, 289 (1994).

V.I. Ivanov, L.A. Karachevtseva, N.I. Karas et al., Semicond. Phys. Quant. Electron. Optoelectron. 10, 72 (2007).

H. Khalili, R.S. Dariani, A. Morteza et al., J. Mater. Sci. 42, 908 (2007).

https://doi.org/10.1007/s10853-006-0010-2

L.S. Monastyrskii, and B.S. Sokolovskii, Prikl. Fiz. 6, 127 (2007).

L.S. Monastyrskii, B.S. Sokolovskii, and V.S. Vasylyshyn, Opt. Mem. Networks 18, 55 (2009).

https://doi.org/10.3103/S1060992X0901010X

A.J. Simons, in Properties of Porous Silicon, edited by L. Canham (INSPEC, London, 1997), p. 176.

O.C. Zienkiewicz, R.L. Taylor, and J.Z. Zhu, The Finite Element Method: Its Basis and Fundamentals (Elsevier Butterworth-Heinemann, Oxford, 2005).

G.N. Watson, Theory of Bessel Functions (Cambridge Univ. Press, Cambridge, 1962).

Published

2022-02-08

How to Cite

Monastyrskii Л., Sokolovskii Б., & Pavlyuk М. (2022). Analytical and Numerical Calculations of Photoconductivity in Porous Silicon. Ukrainian Journal of Physics, 56(9), 902. https://doi.org/10.15407/ujpe56.9.902

Issue

Section

Solid matter

Most read articles by the same author(s)