Characterization of Nanostructured In6Se7 Inclusions in Layered α-In2Se3 Crystals Using Analytical X-Ray Diffractometry Methods
DOI:
https://doi.org/10.15407/ujpe67.9.671Keywords:
layered In2Se3 crystals, microstructure, nanocrystallite inclusions, composites, analytical X-ray diffractometry methodsAbstract
As follows from the X-ray structural analysis, In2Se3 crystals grown from the stoichiometric melt using the Bridgman method turned out inhomogeneous: some of the samples obtained from the same ingot contained only the hexagonal α-In2Se3 phase, whereas inclusions of the In6Se7 crystalline phase were found in the others. The presence of narrower-band-gap semiconductor inclusions in the α-In2Se3 matrix gives rise to the current instability with Z- and N-shaped current-voltage characteristics (CVCs) of the samples; at the same time, single-phase samples demonstrate linear CVCs. Several analytical methods of X-ray diffraction (XRD) analysis, which were applied to characterize the structure of In6Se7 inclusions, testified to the presence of compressive strains in them. It is shown that, owing to the action of compressive strains, the average sizes of In6Se7 crystallites determined using the modified Scherrer, Size-Strain Plot, and Halder–Wagner methods coincide with an accuracy higher than 1% and equal about 26.5 nm. A discrepancy between this value and the average size of In6Se7 nanocrystallites determined using the Williamson–Hall method (23.13 nm) has been discussed. With the help of the X-ray diffraction-absorption method, the average mass fraction of the In6Se7 phase in the investigated samples is determined, and the average concentration of In6Se7 nanocrystallites with an average size of about 26.5 nm over the volume of the layered α-In2Se3 matrix is calculated. A perspective character of the application of In2Se3/In6Se7 composite samples for operating in the optical telecommunication wavelength interval is discussed.
References
Q. Li, Y. Li, J. Gao, S. Wang, X. Sun. High performance single In2Se3 nanowire photodetector. Appl. Phys. Lett. 99, 243105 (2011).
https://doi.org/10.1063/1.3669513
G. Almeida, S. Dogan, G. Bertoni, C. Giannini, R. Gaspari, S. Perissinotto, R. Krahne, S. Ghosh, L. Manna. Colloidal monolayer beta-In2Se3 nanosheets with high photoresponsivity. J. Am. Chem. Soc. 139, 3005 (2017).
https://doi.org/10.1021/jacs.6b11255
Z. Zhang, J. Yang, F. Mei, G. Shen. Longitudinal twinning -In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity. Front. Optoelectron. 11, 45 (2018).
https://doi.org/10.1007/s12200-018-0820-2
S.I. Drapak, V.V. Netyaga, Z.D. Kovalyuk. The electrical and photoelectrical properties of n-In2Se3-p-InSe heterostructures. Tech. Phys. Lett. 28, 711 (2002).
https://doi.org/10.1134/1.1511762
N. Balakrishnan, C.R. Staddon, E.F. Smith, J. Stec. Quantum confinement in beta-In2Se3 layers grown by physical vapour transport for high responsivity photodetectors. 2D Mater. 3, 025030 (2016).
https://doi.org/10.1088/2053-1583/3/2/025030
S. Chen, X. Liu, X. Qiao, X. Wan, K. Shehzad, X. Zhang, Y. Xu, X. Fan. Facile synthesis of y-In2Se3 nanoflowers toward high performance self-powered broadband y-In2Se3/Si heterojunction photodiode. Small. 13, 1604033 (2017).
https://doi.org/10.1002/smll.201604033
S.H. Kwon, B.T. Ahn, S.K. Kim, F.O. Adurodija, K.H. Kang, K.H. Yoon, J. Song. Characterization of CuInSe2 and InxSey thin films by coevaporation method. J. Korean Phys. Soc. 31, 796 (1997).
S. Kwon, B. Ahn, S. Kim, K. Yoon, J. Song. Growth of CuIn3Se5 layer on CuInSe2 films and its effect on the photovoltaic properties of In2Se3/CuInSe2 solar cells. Thin Solid Films. 323, 265 (1998).
https://doi.org/10.1016/S0040-6090(97)00928-0
Y. Ohtake, S. Chaisitsak, A.Yamada, M. Konagai. Characterization of ZnInxSey thin films as a buffer layer for high efficiency Cu(InGa)Se2 thin-film solar cells. Jpn. J. Appl. Phys. 37, 3220 (1998).
https://doi.org/10.1143/JJAP.37.3220
C. Julien, E. Hatzikraniotis, A. Chevy, K. Kambas. Electrical behavior of lithium intercalated layered In-Se compounds. Mater. Res. Bull. 20, 287 (1985).
https://doi.org/10.1016/0025-5408(85)90185-0
H. Peng, X.F. Zhang, R.D. Twesten, Y. Cui. Vacancy ordering and lithium insertion in III2VI3 nanowires. Nano Res. 2, 327 (2009).
https://doi.org/10.1007/s12274-009-9030-y
S. Yang, C.-Y. Xu, L. Yang, S.-P. Huabc, L. Zhen. Solution-phase synthesis of y-In2Se3 nanoparticles for highly efficient photocatalytic hydrogen generation under simulated sunlight irradiation. RSC Adv. 6, 106671 (2016).
https://doi.org/10.1039/C6RA21784B
R. Wanga, J. Wana, J. Jia, W. Xue, X. Hu, E. Liu, J. Fan. Synthesis of In2Se3 homojunction photocatalyst with and phases for efficient photocatalytic performance. Materials & Design. 151, 74 (2018).
https://doi.org/10.1016/j.matdes.2018.04.052
H. Lee, D.-H. Kang, L. Tran. Indium selenide (In2Se3) thin film for phase-change memory. Mater. Sci. Eng. B. 119, 196 (2005).
https://doi.org/10.1016/j.mseb.2005.02.060
A.M. Rasmussen, S.T. Teklemichael, E. Mafi, Y. Gu, M.D. McCluskey. Pressure-induced phase transformation of In2Se3. Appl. Phys. Lett. 102, 062105 (2013).
https://doi.org/10.1063/1.4792313
W. Ding, J. Zhu, Z. Wang, Y. Gao, D. Xiao, Y. Gu, Z. Zhang, W. Zhu. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. Nat. Commun. 8, 14956 (2017).
https://doi.org/10.1038/ncomms14956
C. Cui, W.-J. Hu, X. Yan, C. Addiego, W. Gao, Y. Wang, Z. Wang, L. Li, Y. Cheng, P. Li, X. Zhang, H.N. Alshareef, T. Wu, W. Zhu, X. Pan, L.-J. Li. Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin twodimensional layered semiconductor In2Se3. Nano Lett. 18, 1253 (2018).
https://doi.org/10.1021/acs.nanolett.7b04852
G. Han, Z.-G. Chen, J. Drennan, J. Zou, Indium selenides: Structural characteristics, synthesis and their thermoelectric performances. Small. 10, 2747 (2014).
https://doi.org/10.1002/smll.201400104
L. Yang, Z.-G. Chen, M.S. Dargusch, J. Zou. High performance thermoelectric materials: progress and their applications. Adv. Energy Mater. 8, 1701797, (2018).
https://doi.org/10.1002/aenm.201701797
S. Popovic, A. Tonejc, B. Grzeta-Plenkovic, B. Celustka, R. Trojko. Revised and new crystal data for indium selenides. J. Appl. Cryst. 12, 416 (1979).
https://doi.org/10.1107/S0021889879012863
C. Amory, J.C. Bernede, S. Marsillac. Study of a growth instability of y-In2Se3. J. Appl. Phys. 94, 6945 (2003).
https://doi.org/10.1063/1.1622117
S.B. Syamala, K. Bindu, K.P. Vijayakumar, C. Sudha Kartha. Photoconductivity measurements on g-In2Se3 thin films. Abstracts of the 13-th annual general meeting of materials research society of India (Hyderabad, 2002), p. 267.
M. Kupers, P.M. Konze, A. Meledin, J. Mayer, U. Englert, M. Wuttig, R. Dronskowski. Controlled crystal growth of indium selenide, In2Se3, and the crystal structures of α-In2Se3. Inorg. Chem. 57, 11775 (2018).
https://doi.org/10.1021/acs.inorgchem.8b01950
J. van Landuyt, G. van Tendeloo, S. Amelinck. Phase transitions in In2Se3 as studied by electron microscopy and electron diffraction. Phys. Stat. Sol. A 30, 299 (1975).
https://doi.org/10.1002/pssa.2210300131
J. Ye, S. Soeda, Y. Nakamura, O. Nittono. Crystal structures and phase transformation in In2Se3 compound semiconductor. Jpn. J. Appl. Phys. 37, 4264 (1998).
https://doi.org/10.1143/JJAP.37.4264
A. Chaiken, K. Nauka, G.A. Gibson, H. Lee, C.C. Yang. Structural and electronic properties of amorphous and polycrystalline In2Se3 films. J. Appl. Phys. 94, 2390 (2003).
https://doi.org/10.1063/1.1592631
Yu.I. Zhirko, V.M. Grekhov, Z.D. Kovalyuk. Characterization, optical properties and electron (exciton)-phonon interaction in bulk In2Se3 crystals and InSe nanocrystals in In2Se3 confinement. J. Nanomed. Nanosci. 3, JNAN-148 (2018).
S.I. Drapak, S.V. Gavrilyuk, Z.D. Kovalyuk. Current instability with Z- and N-shaped current-voltage characteristics in inhomogeneous In2Se3 crystals. Tech. Phys. Lett. 35, 569 (2009).
https://doi.org/10.1134/S106378500906025X
V.M. Kaminskii, Z.D. Kovalyuk, A.V. Zaslonkin, V.I. Ivanov. Structure and electrical properties of In2Se3 Mn layered crystals. Semiconductor Physics, Quantum Electronics & Optoelectronics 12, 290 (2009).
Z.D. Kovalyuk, V.B. Boledzyuk, Z.R. Kudrynskyi, A.D. Shevchenko. Ferromagnetism in Co-intercalated In2Se3 layered crystals. Phys. Chem. Solid State. 14, 730 (2013).
V.M. Kaminskii, Z.D. Kovalyuk V.I. Ivanov. Structure and physical properties of In2Se3⟨Mn⟩, InSe⟨Mn⟩ and InSe⟨Fe⟩ layered crystals. Phys. Chem. Solid State. 16, 44 (2015).
https://doi.org/10.15330/pcss.16.1.44-48
O. Madelung. Semiconductors: Data Handbook. 3rd Edition (Springer, 2004) [ISBN: 978-3-540-40488-0].
https://doi.org/10.1007/978-3-642-18865-7
Powder diffraction file, Joint Committee on Powder Diffraction Standards (JCPDS), JCPDS Card No: 23-294.
Ya-Chu Hsu, Yu-Chen Hung, Chiu-Yen Wang. Controlling growth high uniformity indium selenide (In2Se3) nanowires via the rapid thermal annealing process at low temperature. Nanoscale Res. Lett. 12, 532 (2017).
https://doi.org/10.1186/s11671-017-2302-7
Powder diffraction file, Joint Committee on Powder Diffraction Standards (JCPDS), JCPDS Card No: 24-0070.
R. Walther, H.J. Deiseroth. Redetermination of the crystal structure of hexaindium heptaselenide, In6Se7. Zeitshrift fur Kristallographie. 210, 359 (1995).
https://doi.org/10.1524/zkri.1995.210.5.359
A.F. El-Deeb, H.S. Hetwally, H.A. Shebata. Structural and electrical properties of In6Se7 thin films. J. Phys. D: Appl. Phys. 41, 125305 (2008).
https://doi.org/10.1088/0022-3727/41/12/125305
R. Anuroop, B. Pradeep. Structural, optical, ac conductivity and dielectric relaxation studies of reactively evaporated In6Se7 thin films. JALCOM (Journal of Alloys and Compounds) 702, 432 (2017).
https://doi.org/10.1016/j.jallcom.2017.01.190
A.I. Gusev. Nanomaterials, Nanostructures and Nanotechnologies (Fizmatlit, 2005).
B.D. Culity, S.R. Stock. Elements of X-Ray Diffraction. 3rd Edition (Hentice-Hall Inc., 2001) [ISBN-10: 9789332535169].
E.H. Kisi, C.J. Howard. Applications of Neutron Powder Diffraction (Oxford University Press, 2008) [ISBN: 0199657424].
https://doi.org/10.1093/acprof:oso/9780198515944.001.0001
D. Chiche, M. Digne, R. Revel, C. Chaneac, J.-P. Jolivet D. Chiche, M. Digne, R. Revel, C. Chaneac, J.-P. Jolivet. Accurate determination of oxide nanoparticle size and shape based on X-ray powder pattern simulation: application to boehmite AlOOH Accurate determination of oxide nanoparticle size and shape based on X-ray powder pattern simulation: application to boehmite AlOOH. J. Phys. Chem. C 112, 8524 (2008).
https://doi.org/10.1021/jp710664h
S. Zeinali, M. Abdollahi, S. Sabbaghi. Carboxymethylbetta-cyclodextrin modified magnetic nanoparticles for effective removal of arsenic from drinking water: synthesis and adsorption studies. J. Water Environ. Nanotechnol. 1, 104 (2016).
S.M. Londono-Restrepo, R. Jeronimo-Cruz, B.M. MillanMalo, E.M. Rivera-Munoz, M.E. Rodriguez-Garcia. Efect of the nano crystal size on the X-ray difraction patterns of biogenic hydroxyapatite from human, bovine, and porcine bones. Sci. Rep. 9, 5915 (2019).
https://doi.org/10.1038/s41598-019-42269-9
A. Monshi, M.R. Foroughi, M.R. Monshi. Modified Scherrer equation to estimate more accurately nano-crystallite size using XRD. WJNSE (World J. Nano Sci. Engeneering). 2, 154 (2012).
https://doi.org/10.4236/wjnse.2012.23020
N. Rani, S. Chahal, A.S. Chauhan, P. Kumar, R. Shukla, S.K. Singh. X-ray analysis of MgO nanoparticles by modified Scherrer's, Williamson-Hall and Size-Strain method. Materials Today: Proc. 12, 543 (2019).
https://doi.org/10.1016/j.matpr.2019.03.096
R.L. Snydre, J. Fiala, H.J. Bunge. Defect and Microstructure Analysis by Diffraction (Oxford University Press, 1999) [ISBN: 0-19-850189-7].
B. Marinkovic, R.R. de Avillez, A. Saavedra, F.C.R. Assuno. A comparison between the Warren-Averbach method and alternate methods for X-ray diffraction microstructure analysis of polycrystalline specimens. Mat. Res. 4, 71 (2001).
https://doi.org/10.1590/S1516-14392001000200005
D. Balzar. X-ray diffraction line broadening: modeling and applications to high-Tc superconductors. J. Res. Natl. Inst. Standart. Technol. 98, 321 (1993).
https://doi.org/10.6028/jres.098.026
N.T. Tayade, S. Dhawakankar, P.R. Arjuwadkar. Perspective of distortion and vulnerability in structure by using the CdS-ZnS composite approach in Rietveld refinement. J. Phys. Sci. 22, 137 (2017).
R.A.Young. The Ritveld Method (Oxford University Press, 1996) [ISBN: 9780198559122].
D. Balzar, N. Audebrand, M.R. Daymond, A. Fitch, A. Hewat, J.I. Langford, A. Le Bail, D. Louer, O. Masson, C.N. McCowan, N.C. Popa, P.W. Stephens, B.H. Toby. Size-strain line-broadening analys is of the ceria roundrobin sample. J. Appl. Cryst. 37, 911 (2004).
https://doi.org/10.1107/S0021889804022551
P.C. de Sousa Filho, T. Gacoin, J.-P. Boilot, R.I. Walton, O.A. Serra. Synthesis and luminescent properties of REVO4-REPO4 (RE = Y, Eu, Gd, Er, Tm, or Yb) heteronanostructures: A promising class of phosphors for excitation from NIR to VUV. J. Phys. Chem. C. 119, 24062 (2015).
https://doi.org/10.1021/acs.jpcc.5b08249
B.E. Warren. X-ray studies of deformed metals. Progr. Met. Phys. 8, 147 (1959).
https://doi.org/10.1016/0502-8205(59)90015-2
K.R. Beyerlein, R.L. Snyder, M. Li, P. Scardi. Application of the Debye function to systems of crystallites. Philos. Mag. 90, 3891 (2010).
https://doi.org/10.1080/14786435.2010.501769
J.F. Nye. Physical Properties of Crystals - Their Representation by Tensors and Matrixes (Clarendon Press-Oxford University Press, 1985) [ISBN-13: 978-0198511656].
L.M. Kovba, V.K. Trunov. X-Ray Phase Analysis (Moscow Univ. Press, 1976).
L. Motevalizadeh, Z. Heidary, M.E. Abrishami. Facile template-free hydrothermal synthesis and microstrain measurement of ZnO nanorods. Bull. Mater. Sci. 37, 397 (2014).
https://doi.org/10.1007/s12034-014-0676-z
N.C. Halder, C.N.J. Wagner. Separation of particle size and lattice strain in integral breadth measurements. Acta Crystallogr. 20, 312 (1966).
https://doi.org/10.1107/S0365110X66000628
R. Rai, T. Triloki, B.K. Singh. X-ray diffraction line profile analysis of KBr thin films. Appl. Phys. A. 122, 774 (2016).
https://doi.org/10.1007/s00339-016-0293-3
K. Manikandan, S. Dhanuskodi, A.R. Thomas, N. Maheswari, G. Muralidharan, D. Sastikumar. Size-Strain distribution analysis of SnO2 nanoparticles and it's multifunctional applications of fiber optic gas sensor, supercapacitor and optical limiter. RSC Adv. 6, 90559 (2016).
https://doi.org/10.1039/C6RA20503H
S.S. Pushkarev, M.M. Grekhov, N.V. Zenchenko. X-ray diffraction analysis of features of the crystal structure of GaN/Al0.32Ga0.68N HEMT-heterostructures by the Williamson-Hall method. Semiconductors. 52, 734 (2018).
https://doi.org/10.1134/S1063782618060209
R. Yazici, D. Kalyon. Microstrain and defect analysis of CL-20 crystals by novel X-ray methods. J. Energ. Mat. 23, 43 (2005).
https://doi.org/10.1080/07370650590920287
V.A. Sotskov. Experimental study of the concentration dependence of resistivity in disordered macrosystems of the insulator-semiconductor type. Tech. Phys. Lett. 30, 461 (2004).
https://doi.org/10.1134/1.1773335
J.M. Ziman. Models of disorder. The Theoretical Physics of Homogeneously Disordered Systems (Cambridge University Press, 1985) [ISBN-13: 978-0521292801].
S. Popovi. Quantitative phase analysis by X-ray diffraction-doping methods and applications. Crystals. 10, 27 (2020).
https://doi.org/10.3390/cryst10010027
B.D. Cullity. Elements of X-Ray Diffraction. 2nd Edition (Addison-Wesley Publishing Company, Reading, 1978) [ISBN: 9780201011746].
J.H. Hubbell, S.M. Seltzer. X-ray mass attenuation coefficients. NIST Standard Reference Database 126 (Tables of X-ray mass attenuation coefficients and mass energyabsorption coefficients from 1 keV to 20 MeV for elements Z = 1 to 92 and 48 additional substances of dosimetric interest). Last update to data content: July 2004.
O.V. Pupysheva, A.V. Dmitriev, A.A. Ferajian, H. Mizuseki, Y. Kowazoe. Transition between N- and Z-sharped current-voltage characteristics in semiconductor multiplequantum-well structures. J. Appl. Phys. 100, 033718 (2006).
https://doi.org/10.1063/1.2234546
A.A. Dadykin, Yu.N. Kozyrev, A.G. Naumovets. Field electron emission from Ge-Si nanostructures with quantum dots. JETP Lett. 76, 472 (2002).
https://doi.org/10.1134/1.1528705
M.A. Jafarov, E.F. Nasirov, S.A. Mamedova. Negative photoconductivity of alloys of II-VI compounds. Semiconductors. 48, 570 (2014).
https://doi.org/10.1134/S1063782614050066
A.K. Akimov, A.E. Klimov, S.V. Morozov, S.P. Suprun, Y.S. Epov, A.V. Ikonnikov, M.A. Fadeev, V,V. Rumyantsev. Giant negative photoconductivity of PbTe : In films with cut off wavelength near 30 m. Semiconductors. 50, 1684 (2016).
https://doi.org/10.1134/S1063782616120022
S. Panigrahi, D. Basak. Morphology driven ultraviolet photosensitivity in ZnO-CdS composite. J. Colloid Interf. Sci. 364, 10 (2011).
https://doi.org/10.1016/j.jcis.2011.08.001
P. Maity, S.V. Singh, S. Biring, B.N. Pal, A.K. Ghosh. Selective near infrared (NIR) sensitive photodetector fabricated with colloidal CdS:Co quantum dots. J. Mater. Chem. C 7, 7725 (2019).
https://doi.org/10.1039/C9TC01871A
N.B. Nahet. Photodetectors. Materials, Devices and Applications (Elsevier Science-Woodhead Publishing, 2016) [ISBN: 9780081027950].
N. Massa. Fiber Optic Telecommunication (SPIE, 2000).
Downloads
Published
How to Cite
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
