Modification of Optical Properties of Porous AIIIBV Layers Produced by Anodic Etching
Morphology investigations (atomic force microscopy (AFM) and scanning electron microscopy (SEM)), study of Raman scattering (RS) and photoluminescence (PL) have been performed to characterize a series of AIIIBV materials (GaAs, GaP, InP) with an electrochemically prepared porous surface layer. It has been shown that the surface morphology of porous AIIIBV compounds strongly depends on various parameters of the anodization
process such as the etching time, current density, composition of etching solution, and illumination during the etching procedure. The enhancement of a Raman signal from porous surfaces, which has been observed for almost all samples, is caused mainly by the breaking of selection rules for corresponding phonon modes and a decrease of the reflection at the porous surface. The peculiarities of the PL spectra of porous AIIIBV compounds are studied in a wide temperature range. The small quantum confinement effect has been observed for GaAs and InP porous surfaces.
N.L. Dmitruk and V.I. Lyashenko, Fiz. Tverd. Tela 8, 578 (1966).
L. Santinacci and T. Djenizian, C.R. Chimie 11, 964 (2008).
H. Föll, S. Langa, J. Carstensen, M. Christophersen, and I.M. Tiginyanu, Adv. Mater. 15, 183 (2003).
I. Tiginyanu, S. Langa, H. Föll, and V. Ursachi, Porous III-V Semiconductors: Online Book (2009), http://www.porous-35.com/index.html.
N.L. Dmitruk, T.R. Barlas, and E.V. Pidlisnyi, Surf. Sci. 293, 107 (1993).
N.L. Dmitruk, N.V. Kotova, E.V. Podlisnyi, and T.R. Barlas, Phys. Solid State 35, 8 (1993).
.N.L. Dmitruk, O.Yu. Borkovskaya, I.B. Mamontova, and S.V. Mamykin, Sol. Energ. Mat. Sol. C 60, 379 (2000).
P.H.L. Notten, J.E.A.M. van den Meerakker, and J.J. Kelly, Etching of III-V Semiconductors: An Electrochemical Approach (Elsevier, Oxford, 1991).
J. Sabataityte, I. Simkiene, A.N. Baranov, R. A. Bendorius, and V. Pacebutas, Mater. Sci. Eng. C 23, 43 (2003).
J. Sabataityte, I. Simkiene, R.-A. Bendorius, K. Grigoras, V. Jasutis, V. Pacebutas, H. Tvardauskas, and K. Naudzius, Mater. Sci. Eng. C 19, 155 (2002).
D.J. Lockwood, P. Schmuki, H.J. Labbe, and J.W. Fraser, Physica E 4, 102 (1999).
C.M. Finnie and P.W. Bohn, J. Appl. Phys. 86, 4997 (1999).
D.J. Lockwood, J. Solut. Chem. 29, 1039 (2000).
N. Dmitruk, S. Kutovyi, I. Dmitruk, I. Simkiene, J. Sabataityte, and N. Berezovska, Sensors Actuat. B - Chem. 126, 294 (2007).
N. Dmitruk, T Barlas, I. Dmitruk, S. Kutovyi, N. Berezovska, J. Sabataityte, and I. Simkiene, Phys. Status Solidi B 247, 955 (2010).
R.W. Tjerkstra, Electrochem. Solid-State Lett. 9, C81 (2006).
Shu-Lin Zhang, Yongtian Hou, Kuok-San Ho, Bidong Qian, and Shengmin Cai, J. Appl. Phys. 72, 4469 (1992).
D.J. Lockwood, Guolin Yu, and N.L. Rowell, Solid State Commun. 136, 404 (2005).
O. Madelung, Semiconductors: Group IV Elements and III-V Compounds (Springer, Berlin, 1991).
N.L. Dmitruk, A.V. Goncharenko, and E.F. Venger, Optics of Small Particles and Composite Media (Naukova Dumka, Kyiv, 2009).
Y.J. Chen, E. Barstein, and D.L. Mills, Phys. Rev. Lett. 34, 1516 (1975).
A. Liu and C. Duan, Physica E 9, 723 (2001).
G. Irmer, J. Raman Spectrosc. 38, 634 (2007).
Y. Kayanuma, Phys. Rev. B 38, 9797 (1988).
S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, New York, 1992).
A. Liu and C. Duan, Solid-State Electron. 45, 2089 (2001).
G. Su, Q. Guo, and R.E. Palmer, J. Appl. Phys. 94, 7598 (2003).
H. Hasegawa and T. Sato, Electrochim. Acta 50, 3015 (2005).
A.A. Sitnikova, A.V. Bobyl, S.G. Konnikov, and V.P. Ulin, Semicond. 39, 523 (2005).
D.N. Goryachev, L.V. Belyakov, and O.M. Sreseli, Semicond. 44, 1588 (2010).
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