Mott−Hubbard Lacalization in a Model of the Electronic Subsystem of Doped Fullerides

Authors

  • Yu. Dovhopyaty Ternopil Ivan Puluj National Technical University
  • L. Didukh Ternopil Ivan Puluj National Technical University
  • O. Kramar Ternopil Ivan Puluj National Technical University
  • Yu. Skorenkyy Ternopil Ivan Puluj National Technical University
  • Yu. Drohobitskyy Ternopil Ivan Puluj National Technical University

DOI:

https://doi.org/10.15407/ujpe57.9.920

Keywords:

-

Abstract

A microscopical model of doped fulleride electronic subsystem taking the triple orbital degeneracy of energy states into account is considered within the configurational-operator approach. Using the Green function method, the energy spectrum at the integer band filling n = 1 corresponding to AC60 compounds is calculated. A possible correlation-driven metal-insulator transition within the model is discussed.

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Published

2012-09-30

How to Cite

Dovhopyaty, Y., Didukh, L., Kramar , O., Skorenkyy, Y., & Drohobitskyy, Y. (2012). Mott−Hubbard Lacalization in a Model of the Electronic Subsystem of Doped Fullerides. Ukrainian Journal of Physics, 57(9), 920. https://doi.org/10.15407/ujpe57.9.920

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Section

Solid matter