Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

V.V. Kaliuzhnyi; O.I. Liubchenko; M.D. Tymochko; Y.M. Olikh; V.P. Kladko; A.E. Belyaev

doi:10.15407/ujpe66.12.1058

Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

Authors

V.V. Kaliuzhnyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
O.I. Liubchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
M.D. Tymochko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Y.M. Olikh V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V.P. Kladko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
A.E. Belyaev V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe66.12.1058

Keywords:

electronic transport, heterostructure, 2DEG, gallium nitride, ultrasound

Abstract

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

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Published

2021-12-20

How to Cite

Kaliuzhnyi, V., Liubchenko, O., Tymochko, M., Olikh, Y., Kladko, V., & Belyaev, A. (2021). Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations. Ukrainian Journal of Physics, 66(12), 1058. https://doi.org/10.15407/ujpe66.12.1058

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Issue

Vol. 66 No. 12 (2021)

Section

Semiconductors and dielectrics

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