The Magnetic Domain Structure Properties in Diluted Magnetic Semiconductors
DOI:
https://doi.org/10.15407/ujpe65.10.881Keywords:
magnetic domain structure, diluted magnetic semiconductorAbstract
We present a comprehensive analysis of the domain structure formation in the ferromagnetic
phase of diluted magnetic semiconductors (DMS) of the p-type. Our analysis is carried out
on the base of the effective magnetic free energy of DMS calculated by us earlier. This free
energy, substituting DMS (a disordered magnet) by an effective ordered substance, permits us
to apply the standard phenomenological approach to the domain structure calculation. Using
the coupled system of Maxwell equations with those obtained by the minimization of the free
energy functional, we show the existence of the critical ratio vcr of concentration of charge
carriers and magnetic ions such that the sample critical thickness Lcr (such that the sample
is monodomain at L < Lcr) diverges as v → vcr. At v > vcr, the sample is monodomain. This
feature makes DMS different from conventional ordered magnets, as it gives a possibility to
control the sample critical thickness and the emerging domain structure period by a variation
of v. As the concentration of magnetic impurities grows, vcr → ∞, restoring a conventional
behavior of ordered magnets. Above facts have been revealed by the examination of the tem-
perature of the transition to an inhomogeneous magnetic state (stripe domain structure) in
the slab of a p-type DMS with finite thickness L. Our theory can be easily generalized for an
arbitrary disordered magnet.
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