Ordered Electron-Hole Condensate as a Perspective Laser 2D Environment at Room Temperatures


  • V.G. Lytovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • L.L. Fedorenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • D.V. Korbutyak V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • M.V. Strikha V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine, Taras Shevchenko National University of Kyiv, Faculty of Radiophysics, Electronics, and Computer Systems




electron-hole condensate, exciton continuum, capture centers, 2D excitons, macroditch resonator, induced radiation


A comparative analysis of the processes governing the formation and stability of the electron-hole (EH) exciton continuum in 3D and 2D semiconductors has been carried out on the basis of theoretical and experimental results obtained by the authors, as well as literature data. Using the phase diagrams, luminescence spectra, and lux-lux dependences, a substantial increase of the excitonic binding energy Eex and the EH continuum stability as compared with those in the 3D case is demonstrated. The role of physical factors responsible for the growth of the excitonic binding energy Eex and the EH continuum stability in the 2D case, namely, the exciton binding at shallow impurity centers, image forces, and the correlation factor, is analyzed. The peculiarities of the exciton-polariton and electron-hole continua are considered taking the Bose–Einstein and Fermi–Dirac statistics into account. Tasks for further theoretical studies are formulated, and the advantages of the application of macroresonator 2D ditches as optoelectronic devices of the new generation, which do not need the complicated and costly MBE technology, are indicated.


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How to Cite

Lytovchenko, V., Fedorenko, L., Korbutyak, D., & Strikha, M. (2021). Ordered Electron-Hole Condensate as a Perspective Laser 2D Environment at Room Temperatures. Ukrainian Journal of Physics, 66(7), 612. https://doi.org/10.15407/ujpe66.7.612



Semiconductors and dielectrics