Influence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys

  • A. V. Zinovchuk Ivan Franko State University of Zhytomyr
  • E. A. Sevost’yanov Ivan Franko State University of Zhytomyr
Keywords: InGaN compounds, atomic disorder, Auger recombination, supercell

Abstract

The influence of the atomic disorder on the Auger recombination rate in p-InGaN alloys has been studied. The disorder was simulated using a 4 × 4 × 4 supercell in which In and Ga atoms taken in a required stoichiometric ratio were randomly distributed over the supercell sites. A comparison between the Auger recombination rates calculated in the framework of the supercell and virtual-crystal approximations showed that a large number of allowed interband transitions induced by the atomic disorder strongly increases the Auger recombination rate in wide-band-gap p-InGaN alloys.

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Published
2020-03-03
How to Cite
Zinovchuk, A., & Sevost’yanov, E. (2020). Influence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys. Ukrainian Journal of Physics, 65(2), 157. https://doi.org/10.15407/ujpe65.2.157
Section
Semiconductors and dielectrics