Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists
Keywords:chalcogenide glass, thin films, As–Se, electron-induced surface relief
The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.
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