Optical and Electrical Properties of Tb–ZnO/SiO2 Structure in the Infrared Spectral Interval

  • O. V. Melnichuk Mykola Gogol State University of Nizhyn
  • L. Yu. Melnichuk Mykola Gogol State University of Nizhyn
  • N. O. Korsunska V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine http://orcid.org/0000-0002-4778-5074
  • L. Yu. Khomenkova V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine http://orcid.org/0000-0002-5267-5945
  • Ye. F. Venger V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Keywords: zinc oxide, SiO2, IR reflection, thin film, dielectric substrate, phonon, plasmon, electron concentration

Abstract

Optical and electrophysical properties of terbium-doped zinc oxide films have been studied, by using the external reflection IR spectroscopy. The films were deposited onto silicon oxide substrates with the help of the magnetron sputtering method. A theoretical analysis of the reflection spectra of the ZnO/SiO2 structure is carried out in the framework of a multioscillatory model in the spectral interval 50–1500 cm−1 and for the electrical field orientation perpendicular to the c-axis (E⊥C). The method of dispersion analysis is applied to determine the optical and electrical properties of ZnO films, as well as the oscillator strengths and damping coefficients in the ZnO film and the SiO2 substrate. The influences of the phonon and plasmon-phonon subsystems in the ZnO film on the shape of IR reflection spectra registered from the Tb–ZnO/SiO2 structure are elucidated.

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Published
2019-06-18
How to Cite
Melnichuk, O., Melnichuk, L., Korsunska, N., Khomenkova, L., & Venger, Y. (2019). Optical and Electrical Properties of Tb–ZnO/SiO2 Structure in the Infrared Spectral Interval. Ukrainian Journal of Physics, 64(5), 434. https://doi.org/10.15407/ujpe64.5.434
Section
Semiconductors and dielectrics

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