Influence of Laser Light on the Formation and Properties of Silicon Nanocrystals in a-Si/Sn Layered Structures

  • V. B. Neimash Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • A. S. Nikolenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. V. Strelchuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • P. Ye. Shepelyavyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • P. M. Litvinchuk Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • V. V. Melnyk Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • I. V. Olkhovyk Institute of Physics, Nat. Acad. of Sci. of Ukraine
Keywords: amorphous silicon, nanocrystals, crystallization, tin, laser

Abstract

The influence of the laser light intensity and the temperature on the tin-induced crystallization of amorphous silicon has been studied using the Raman screening and optical microscopy methods. The existence of non-thermal mechanisms giving rise to the influence of laser light on the formation of silicon nanocrystals and their Raman spectra is demonstrated experimentally. The photoionization of silicon and the electron-phonon interaction are considered as possible origins of the detected effects. The prospects of their application in new technologies for producing nano-silicon films used in solar cells are discussed.

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Published
2019-08-02
How to Cite
Neimash, V., Nikolenko, A., Strelchuk, V., Shepelyavyi, P., Litvinchuk, P., Melnyk, V., & Olkhovyk, I. (2019). Influence of Laser Light on the Formation and Properties of Silicon Nanocrystals in a-Si/Sn Layered Structures. Ukrainian Journal of Physics, 64(6), 522. https://doi.org/10.15407/ujpe64.6.522
Section
Semiconductors and dielectrics

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