Influence of Laser Light on the Formation and Properties of Silicon Nanocrystals in a-Si/Sn Layered Structures

V. B. Neimash; A. S. Nikolenko; V. V. Strelchuk; P. Ye. Shepelyavyi; P. M. Litvinchuk; V. V. Melnyk; I. V. Olkhovyk

doi:10.15407/ujpe64.6.522

Influence of Laser Light on the Formation and Properties of Silicon Nanocrystals in a-Si/Sn Layered Structures

Authors

V. B. Neimash Institute of Physics, Nat. Acad. of Sci. of Ukraine
A. S. Nikolenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. V. Strelchuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
P. Ye. Shepelyavyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
P. M. Litvinchuk Institute of Physics, Nat. Acad. of Sci. of Ukraine
V. V. Melnyk Institute of Physics, Nat. Acad. of Sci. of Ukraine
I. V. Olkhovyk Institute of Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe64.6.522

Keywords:

amorphous silicon, nanocrystals, crystallization, tin, laser

Abstract

The influence of the laser light intensity and the temperature on the tin-induced crystallization of amorphous silicon has been studied using the Raman screening and optical microscopy methods. The existence of non-thermal mechanisms giving rise to the influence of laser light on the formation of silicon nanocrystals and their Raman spectra is demonstrated experimentally. The photoionization of silicon and the electron-phonon interaction are considered as possible origins of the detected effects. The prospects of their application in new technologies for producing nano-silicon films used in solar cells are discussed.

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Published

2019-08-02

How to Cite

Neimash, V. B., Nikolenko, A. S., Strelchuk, V. V., Shepelyavyi, P. Y., Litvinchuk, P. M., Melnyk, V. V., & Olkhovyk, I. V. (2019). Influence of Laser Light on the Formation and Properties of Silicon Nanocrystals in a-Si/Sn Layered Structures. Ukrainian Journal of Physics, 64(6), 522. https://doi.org/10.15407/ujpe64.6.522

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Issue

Vol. 64 No. 6 (2019)

Section

Semiconductors and dielectrics

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