Scanning Tunneling Microscopy Investigation of the Si(001)-c(8 × 8) Nanostructured Surface

  • A. Goriachko Department of Nanophysics and Nanoelectronics, Taras Shevchenko National University of Kyiv
  • S. P. Kulyk Department of Nanophysics and Nanoelectronics, Taras Shevchenko National University of Kyiv
  • P. V. Melnik Department of Nanophysics and Nanoelectronics, Taras Shevchenko National University of Kyiv
  • M. G. Nakhodkin Department of Nanophysics and Nanoelectronics, Taras Shevchenko National University of Kyiv
Keywords: silicon, surface, reconstruction, scanning tunneling microscopy

Abstract

The rarely observed Si(001)-c(8 × 8) reconstruction is a unique nanostructured state of the Si(001) surface. It was obtained through the sample contamination with trace amounts of Cu below the electron spectroscopy detection limit. As our detailed STM investigation shows, the surface is not atomically flat in the c(8 × 8) state. Instead, the principal elements of this reconstruction belong to two subsequent atomic layers. They are the epitaxial Si ad-dimers in the first atomic layer and the double dimer vacancies in the second atomic layer.

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Published
2019-01-22
How to Cite
Goriachko, A., Kulyk, S., Melnik, P., & Nakhodkin, M. (2019). Scanning Tunneling Microscopy Investigation of the Si(001)-c(8 × 8) Nanostructured Surface. Ukrainian Journal of Physics, 60(2), 148. https://doi.org/10.15407/ujpe60.02.0148
Section
Nanosystems