Interaction of Oxygen and Gadolinium with Si(100)-2×1 Surface. Formation of a System with 1-eV Work Function
DOI:
https://doi.org/10.15407/ujpe60.02.0097Keywords:
adsorption, gadolinium, oxygen, Si(100)-2×1 surface, oxidation, work function, dipole layerAbstract
Changes in the electronic properties of the Si(100) surface, when a multilayer structure of oxidized Gd atoms is created on it, have been studied, by using the electron spectroscopy methods. It is shown that, after a number of adsorption cycles of Gd and oxygen atoms on the Si(100)-2×1 surface at room temperature and the annealing of the obtained structure at 600 ∘C, the work function decreases from 4.8 to less than 1 eV. The work function reduction at larger numbers of processing cycles is shown to be accompanied by the oxidation of Gd and Si atoms and a gradual decrease of the Si concentration in the near-surface region. The obtained results are explained by the formation of an O–Gd dipole layer on the surface.
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