Polarized Radiation Interferometry Research of Thermoelasticity in Silicon Crystal with the Use of Modulation Polarimetry

I. A. Minailova

doi:10.15407/ujpe60.03.0268

Polarized Radiation Interferometry Research of Thermoelasticity in Silicon Crystal with the Use of Modulation Polarimetry

Authors

I. A. Minailova V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe60.03.0268

Keywords:

modulation polarimetry, thermoelasticity, photoelasticity, polarized radiation interference, mechanical stress

Abstract

By registering the polarization state of probing radiation transmitted through a silicon crystal wafer, the optical anisotropy induced in the crystal by the heat flow from an external contact heater has been studied. The modulation polarimetry technique is used, the high resolution of which allowed the measurements to be made under conditions of the low temperature gradient and, hence, temperature-independent coefficients. A superposition of two- and multibeam interferences of circularly polarized radiation is detected. It is shown that the corresponding parameters provide information on the magnitude of mechanical stresses (dielectric anisotropy), as well as on some optical coefficients.

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Published

2019-01-21

How to Cite

Minailova, I. A. (2019). Polarized Radiation Interferometry Research of Thermoelasticity in Silicon Crystal with the Use of Modulation Polarimetry. Ukrainian Journal of Physics, 60(3), 268. https://doi.org/10.15407/ujpe60.03.0268

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Issue

Vol. 60 No. 3 (2015)

Section

Solid matter

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