Calculation of the Ground-State Ionization Energy for Shallow Donors in n-Ge Single Crystals within the Δ1-Model for the Conduction Band

  • S. V. Luniov Luts’k National Technical University
  • O. V. Burban Luts’k National Technical University
  • P. F. Nazarchuk Luts’k National Technical University
Keywords: Ritz variational method, chemical shift, Δ1-minimum, anisotropy factor

Abstract

On the basis of the Ritz variational method, the ionization energies for the ground states of Sb, P, and As donors in n-Ge single crystals are calculated in the framework of the Δ1-model for the conduction band and taking the dispersion law anisotropy and the chemical shift into account. A comparison of theoretical results with corresponding experimental data shows that the model of impurity’s Coulomb potential can be used as a rough approximation only for Sb
impurities in Ge, making no allowance for the chemical shift. For the P and As impurities, when the potential field of an impurity ion is not Coulombic, the calculations have to be carried out with regard for a chemical shift.

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Published
2019-01-10
How to Cite
Luniov, S., Burban, O., & Nazarchuk, P. (2019). Calculation of the Ground-State Ionization Energy for Shallow Donors in n-Ge Single Crystals within the Δ1-Model for the Conduction Band. Ukrainian Journal of Physics, 60(10), 1022. https://doi.org/10.15407/ujpe60.10.1022
Section
Solid matter

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