Thermoelectric Properties of Bismuth-Doped Tin Telluride SnTe:Bi
X-ray researches are carries out, and the thermoelectric coefficient a and the specific conductivity q are measured for tin telluride specimens doped with bismuth to concentrations of 0–2.0 at.% Bi. Non-monotonic dependences of the unit cell parameter and the electrical parameters on the Bi impurity content are demonstrated. The introduction of bismuth to 1.0 at.% is found to favor an increase in the thermoelectric power a2q in SnTe at temperatures T > 500 K as a result of the thermoelectric coefficient growth.
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