Thermoelectric Properties of Bismuth-Doped Tin Telluride SnTe:Bi

  • D. M. Freik Vasyl Stefanyk Precarpathian National University
  • S. I. Mudryi Ivan Franko National University of Lviv
  • I. V. Gorichok Vasyl Stefanyk Precarpathian National University
  • V. V. Prokopiv Vasyl Stefanyk Precarpathian National University
  • O. M. Matkivsky Vasyl Stefanyk Precarpathian National University
  • I. O. Arsenjuk Vasyl Stefanyk Precarpathian National University
  • O. S. Krynytsky Vasyl Stefanyk Precarpathian National University
  • V. M. Bojchyk Vasyl Stefanyk Precarpathian National University
Keywords: tin telluride, doping, thermoelectric properties

Abstract

X-ray researches are carries out, and the thermoelectric coefficient a and the specific conductivity q are measured for tin telluride specimens doped with bismuth to concentrations of 0–2.0 at.% Bi. Non-monotonic dependences of the unit cell parameter and the electrical parameters on the Bi impurity content are demonstrated. The introduction of bismuth to 1.0 at.% is found to favor an increase in the thermoelectric power a2q in SnTe at temperatures T > 500 K as a result of the thermoelectric coefficient growth.

References

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Published
2019-01-08
How to Cite
Freik, D., Mudryi, S., Gorichok, I., Prokopiv, V., Matkivsky, O., Arsenjuk, I., Krynytsky, O., & Bojchyk, V. (2019). Thermoelectric Properties of Bismuth-Doped Tin Telluride SnTe:Bi. Ukrainian Journal of Physics, 61(2), 155. https://doi.org/10.15407/ujpe61.02.0155
Section
Solid matter

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