Polarization Dependences of Radiation Emission by Hot Carriers in InSb

Authors

  • V. M. Bondar Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • P. M. Tomchuk Institute of Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe61.02.0150

Keywords:

InSb, polarization dependences of radiation emission, hot carriers

Abstract

Polarization dependences of the spontaneous radiation emitted by hot carriers in p- and n-InSb have been measured experimentally and explained theoretically. A periodic dependence of the spontaneous radiation intensity on the polarizer rotation angle with respect to the direction of the heating electric field is found. This dependence is associated with a field-induced deviation of the even component in the distribution function of hot carriers from the spherical shape (a deviation from the diffusion approximation).

Published

2019-01-08

How to Cite

Bondar, V. M., & Tomchuk, P. M. (2019). Polarization Dependences of Radiation Emission by Hot Carriers in InSb. Ukrainian Journal of Physics, 61(2), 150. https://doi.org/10.15407/ujpe61.02.0150

Issue

Section

Solid matter