Raman Scattering in the Process of Tin-Induced Crystallization of Amorphous Silicon

V. Neimash; G. Dovbeshko; P. Shepelyavyi; V. Danko; V. Melnyk; M. Isaiev; A. Kuzmich

doi:10.15407/ujpe61.02.0143

Raman Scattering in the Process of Tin-Induced Crystallization of Amorphous Silicon

Authors

V. Neimash Institute of Physics, Nat. Acad. of Sci. of Ukraine
G. Dovbeshko Institute of Physics, Nat. Acad. of Sci. of Ukraine
P. Shepelyavyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. Danko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. Melnyk Taras Shevchenko National University of Kyiv, Faculty of Physics
M. Isaiev Taras Shevchenko National University of Kyiv, Faculty of Physics
A. Kuzmich Taras Shevchenko National University of Kyiv, Faculty of Physics

DOI:

https://doi.org/10.15407/ujpe61.02.0143

Keywords:

solar cell, thin films, nanocrystals, silicon, tin, metal-induced crystallization

Abstract

Metal-induced crystallization in Si–Sn–Si thin film structures has been studied, by using the Raman scattering at various light powers. The Raman spectra are used to monitor the temperature, size, and concentration of Si crystals formed in the amorphous Si matrix. A significant acceleration of the metal-induced crystallization in Si–Sn–Si structures at their laser-assisted annealing in comparison with their annealing in dark is revealed. A basic possibility of the “on line” monitoring of the size and the concentration of Si nanocrystals in the course of their formation is demonstrated.

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Published

2019-01-08

How to Cite

Neimash, V., Dovbeshko, G., Shepelyavyi, P., Danko, V., Melnyk, V., Isaiev, M., & Kuzmich, A. (2019). Raman Scattering in the Process of Tin-Induced Crystallization of Amorphous Silicon. Ukrainian Journal of Physics, 61(2), 143. https://doi.org/10.15407/ujpe61.02.0143

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Issue

Vol. 61 No. 2 (2016)

Section

Solid matter

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