Effect of Argon Deposition Pressure on the Properties of Aluminum-Doped ZnO Films Deposited Layer-by-Layer Using Magnetron Sputtering

V. I. Popovych; A. I. Ievtushenko; O. S. Lytvyn; V. R. Romanjuk; V. M. Tkach; V. A. Baturyn; O. Y. Karpenko; M. V. Dranchuk; L. O. Klochkov; M. G. Dushejko; V. A. Karpyna; G. V. Lashkarov

doi:10.15407/ujpe61.04.0325

Effect of Argon Deposition Pressure on the Properties of Aluminum-Doped ZnO Films Deposited Layer-by-Layer Using Magnetron Sputtering

Authors

V. I. Popovych I.M. Frantsevych Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
A. I. Ievtushenko I.M. Frantsevych Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
O. S. Lytvyn V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. R. Romanjuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
V. M. Tkach V. Bakul Institute for Superhard Materials, Nat. Acad. of Sci. of Ukraine
V. A. Baturyn Institute of Applied Physics, Nat. Acad. of Sci. of Ukraine
O. Y. Karpenko Institute of Applied Physics, Nat. Acad. of Sci. of Ukraine
M. V. Dranchuk I.M. Frantsevych Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
L. O. Klochkov I.M. Frantsevych Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
M. G. Dushejko National Technical University of Ukraine “Kyiv Polytechnic Institute”
V. A. Karpyna I.M. Frantsevych Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
G. V. Lashkarov I.M. Frantsevych Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe61.04.0325

Keywords:

ZnO films, aluminum doping, argon pressure effect, X-ray diffraction analysis

Abstract

ZnO:Al films are deposited layer-by-layer onto silicon and glass substrates, by using the radio-frequency magnetron sputtering method at various argon pressures from 0.5 to 2 Pa in a deposition chamber. The influence of this pressure on the structure and the optical and electrical properties of ZnO:Al films is studied. Higher argon pressures are found to reduce the electron mobility in transparent conductive ZnO:Al films and to worsen their conducting properties owing to the free electron scattering by grain boundaries. An increase in the free electron scattering at higher argon pressures reduces the transparency of ZnO:Al films in the visible spectral range.

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Published

2019-01-06

How to Cite

Popovych, V. I., Ievtushenko, A. I., Lytvyn, O. S., Romanjuk, V. R., Tkach, V. M., Baturyn, V. A., Karpenko, O. Y., Dranchuk, M. V., Klochkov, L. O., Dushejko, M. G., Karpyna, V. A., & Lashkarov, G. V. (2019). Effect of Argon Deposition Pressure on the Properties of Aluminum-Doped ZnO Films Deposited Layer-by-Layer Using Magnetron Sputtering. Ukrainian Journal of Physics, 61(4), 325. https://doi.org/10.15407/ujpe61.04.0325

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Issue

Vol. 61 No. 4 (2016)

Section

Solid matter

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