Analysis of the Formation of Stationary Patterns at the Ion Sputtering within the Anisotropic Kuramoto–Sivashinsky Model
The processes of change of a surface morphology and formation of a stationary pattern at the ion sputtering are considered. A linear stability analysis was carried out, and the range of parameters, at which the patterning is possible, is determined. Assuming the existence of a stabilization parameter that involves the redistribution of knocked-out atoms, all evolution scenarios for the surface are obtained numerically. The dynamics of defects is numerically analyzed for every structure type, and the corresponding time dependences are plotted.