Formation of Periodic Structures under the Influence of an Acoustic Wave in Semiconductors with a Two-Component Defect Subsystem

Authors

  • R. M. Peleshchak Ivan Franko State Pedagogical University of Drohobych
  • O. V. Kuzyk Ivan Franko State Pedagogical University of Drohobych
  • O. O. Dan’kiv Ivan Franko State Pedagogical University of Drohobych

DOI:

https://doi.org/10.15407/ujpe61.08.0747

Keywords:

point defects, acoustic wave, diffusion, deformation

Abstract

A deformation-diffusion model describing the formation of periodic structures in semiconductors with a two-component defect subsystem by means of an acoustic wave has been developed. The theory makes allowance for the deformation created by the acoustic wave and point defects. In the framework of this model, a possibility of the ultrasound-stimulated hydrogen passivation of electrically active Cl centers in the CdTe semiconductor and the size dispersion reduction of strained InAs/GaAs quantum dots doped with an isovalent impurity are analyzed.

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Published

2019-01-05

How to Cite

Peleshchak, R. M., Kuzyk, O. V., & Dan’kiv, O. O. (2019). Formation of Periodic Structures under the Influence of an Acoustic Wave in Semiconductors with a Two-Component Defect Subsystem. Ukrainian Journal of Physics, 61(8), 741. https://doi.org/10.15407/ujpe61.08.0747

Issue

Section

Solid matter