Features in the Formation of a Recombination Current in the Space Charge Region of Silicon Solar Cells

  • A. V. Sachenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. P. Kostylyov V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. M. Vlasiuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • R. M. Korkishko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • I. O. Sokolovs’kyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. V. Chernenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Keywords: recombination current, space charge region, silicon solar cells, deep recombination level

Abstract

Dark I–V curves of silicon solar cells with various Shockley–Reed–Hall lifetimes have been studied. The lifetimes are determined from the short-circuit-current internal quantum yield. The recombination currents in the space charge region (SCR) are found to be formed within time intervals that are at least an order of magnitude shorter than the charge-carrier bulk lifetime. This effect can be associated with a high defect concentration (and, therefore, a high deep-level concentration) in the SCR of examined Si structures. The parameters of deep centers that are responsible for the recombination in the SCR have been evaluated.

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Published
2019-01-04
How to Cite
Sachenko, A., Kostylyov, V., Vlasiuk, V., Korkishko, R., Sokolovs’kyi, I., & Chernenko, V. (2019). Features in the Formation of a Recombination Current in the Space Charge Region of Silicon Solar Cells. Ukrainian Journal of Physics, 61(10), 917. https://doi.org/10.15407/ujpe61.10.0917
Section
Solid matter

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