Polarization-Dependent Photocurrent in p-GaAs

Authors

  • V. R. Rasulov Ferghana State University, Chair of Physics

DOI:

https://doi.org/10.15407/ujpe61.11.0987

Keywords:

photovoltaic effect, semiconductor, polarization, photocurrent, Hamiltonian, momentum operator, energy spectrum, light absorption coefficient

Abstract

An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared.

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Published

2019-01-04

How to Cite

Rasulov, V. R. (2019). Polarization-Dependent Photocurrent in p-GaAs. Ukrainian Journal of Physics, 61(11), 987. https://doi.org/10.15407/ujpe61.11.0987

Issue

Section

Solid matter