IR Spectroscopic Study of Thin ZnO Films Grown Using the Atomic Layer Deposition Method

  • E. F. Venger V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • L. Yu. Melnichuk Mykola Gogol State University of Nizhyn
  • A. V. Melnichuk Mykola Gogol State University of Nizhyn
  • T. V. Semikina V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Keywords: disturbed total internal reflection, undoped conducting ZnO films, surface plasmon-phonon polaritons


Using the IR reflection method and the modified method of disturbed total internal reflection (DTIR), thin undoped conducting ZnO films grown with the use of the atomic layer deposition method have been studied theoretically and experimentally for the first time in a spectral interval of 400–1400 cm−1. The parameters of ZnO films determined from the IR reflection spectra testify to the presence of frequency “windows” in the DTIR spectra, in which surface phonon and plasmon-phonon polaritons are excited. The theoretical calculations are in good agreement with the experimental results. The dispersion dependences of high- and low-frequency branches of DTIR spectra are plotted and analyzed.


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How to Cite
Venger, E., Melnichuk, L., Melnichuk, A., & Semikina, T. (2019). IR Spectroscopic Study of Thin ZnO Films Grown Using the Atomic Layer Deposition Method. Ukrainian Journal of Physics, 61(12), 1053.
Solid matter

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