Miniband Electrical Conductivity in Superlattices of Spherical InAs/GaAs Quantum Dots

  • V. I. Boichuk Department of Theoretical and Applied Physics and Computer Simulation, Ivan Franko State Pedagogical University of Drohobych
  • I. V. Bilynskyi Department of Theoretical and Applied Physics and Computer Simulation, Ivan Franko State Pedagogical University of Drohobych
  • R. I. Pazyuk Department of Theoretical and Applied Physics and Computer Simulation, Ivan Franko State Pedagogical University of Drohobych
Keywords: quantum dot, superlattice, electron states, miniband, electrical conductivity


The electrical properties of nanoscale semiconductor InAs/GaAs heterosystems with 2D-superlattices of spherical quantum dots have been studied. The dependences of the electron group velocity on the wave vector and the miniband quantum number are obtained. The dependences of the Fermi level of electrons in minibands on the concentration of donor impurities, donor energy, and temperature are found. The temperature dependences of the majority carrier concentration and the electrical conductivity are analyzed for various donor concentrations and energies.


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How to Cite
Boichuk, V., Bilynskyi, I., & Pazyuk, R. (2018). Miniband Electrical Conductivity in Superlattices of Spherical InAs/GaAs Quantum Dots. Ukrainian Journal of Physics, 62(4), 335.