Charge-Transfer Processes in (SnS)1−x(PrS)x Alloys

  • I. I. Abbasov Azerbaijan State Oil and Industrial University
  • J. I. Huseynov Azerbaijan State Pedagogical University
Keywords: solid solutions, chalcogenides, electrical conductivity, donor, Hall coefficient, valence band, light and heavy holes


Interactions in the SnS–PrS alloy system have been studied. On the basis of the results of complex physicochemical analysis, the interval of PrS solubility in SnS is determined. The microrelief of the surface of PrxSn1−xS single crystals is analyzed using a scanning probe microscope operating in the atomic-force regime. The electrical conductivity and the Hall coefficient are researched in a broad temperature interval of 80–800 K. The charge-transfer processes in the objects concerned are analyzed.


D.I. Bletskan. Material synthesis and growth of the single crystals of the type AIVBVI and AIVBIV 2 . Chalcogen. Lett. 4, 1 (2007).

Physical Properties of Chalcogenides of Rare-Earth Elements, edited by V.P. Zhuze (Nauka, 1973) (in Russian).

E.I. Yarembash, A.A. Eliseev. Chalcogenides of Rare-Earth Elements (Nauka, 1975) (in Russian).

F.F. Aliev, G.A. Gasanov. Influence of samarium on thermoelectric Q-factor of Sm Pb1− Te solid solutions. Fiz. Tekh. Poluprovodn. 46, 313 (2012) (in Russian).

P.D. Antunez, J.J. Buckley, R.L Brutchey. Tin and germanium monochalcogenide IV-VI semiconductor nanocrystals for use in solar cells. Nanoscale 3, 2399 (2011).

K.N. Reddy, K. Ramesh, R. Ganesan, R.K.T. Reddy, K.R. Gunasekhar, E.S.R. Gopal. Synthesis and characterization of co-evaporated tin sulfide thin films. Appl. Phys. A 83, 133 (2006).

A. Luque, A. Marti. Handbook of Photovoltaic Science and Engineering (Wiley, 2003).

V.F. Gremenok, V.Yu. Rud', Yu.V. Rud', S.A. Bashkirov, V.A. Ivanov. Photosensitive thin-film Schottky barriers In/p-Pb Sn1− S: creation and properties. Fiz. Tekh. Poluprovodn. 45, 1084 (2011) (in Russian).

K.N. Reddy, M. Devika, E.S.R. Gopal. Review on tin (II) sulfide (SnS) material: synthesis, properties, and applications. Crit. Rev. Solid State Mater. Sci. 40, 359 (2015).

J. Wang, G. Lian, Z. Xu et al. Growth of large-size SnS thin crystals driven by oriented attachment and applications to gas sensors and photodetectors. ACS Appl. Mater. Interfaces 8, 9545 (2016).

J.W. Orton, P. Blood. The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Academic Press, 1990).

V.L. Mironov. Fundamentals of Scanning Probe Microscopy (Tekhnosfera, 2004), p. 197 (in Russian).

A.A. Radtsig, B.M. Smirnov. Reference Data on Atoms, Molecules, and Ions (Springer, 1986).

E.V. Kuchis. Galvano-Magnetic Effects and Methods of Their Research (Radio i Svyaz', 1990) (in Russian).

R.A. Smith. Semiconductors (Cambridge Univ. Press (1978).

J.I. Huseynov, M.I. Murguzov, Sh.S. Ismailov. Specific features of self-compensation in Er Sn1− Se solid solutions. Fiz. Tekh. Poluprovodn. 47, 298 (2013) (in Russian).

How to Cite
Abbasov, I., & Huseynov, J. (2018). Charge-Transfer Processes in (SnS)1−x(PrS)x Alloys. Ukrainian Journal of Physics, 62(10), 883.
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