Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon
The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobility under the compression along crystallographic axis  is connected with a change in their scattering on large-scale defect formations.
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