Laser-Stimulated Enhancement of the Reflectance of Single-Crystalline n-GaAs(100)

  • P. O. Gentsar V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • O. I. Vlasenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • S. M. Levytskyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Keywords: n-GaAs(100), laser irradiation, reflection spectra, refractive index, near-surface layer

Abstract

The results of optical researches concerning the reflection spectra of n-GaAs(100) single crystals with a specific resistance of 10 Ωcm (at room temperature) measured in a light wave-length interval of 0.2–1.7 мm before and after the laser irradiation to an energy dose of 66–108 mJ/cm2 are reported. The experiment revealed a growth in the reflectance of the examined crystals after their laser treatment. This integral effect is explained as a result of the difference between the optical characteristics (the complex refractive index) in the near-surface layer and in the bulk of the irradiated material.

References

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Published
2018-12-12
How to Cite
Gentsar, P., Vlasenko, O., & Levytskyi, S. (2018). Laser-Stimulated Enhancement of the Reflectance of Single-Crystalline n-GaAs(100). Ukrainian Journal of Physics, 62(11), 953. https://doi.org/10.15407/ujpe62.11.0953
Section
Optics, lasers, and quantum electronics