Photoelectric Properties of SiGe Films Covered with Amorphous- and Polycrystalline-Silicon Layers
Keywords:photovoltage, SiGe, a-Si, poly-Si
The deposition of thin layers of amorphous (a-Si) or polycrystalline (poly-Si) silicon onto the Ge0.25Si0.75 film already covering the surface of a crystalline silicon (c-Si) wafer is found to significantly reduce the magnitude of the negative surface photovoltage (SPV) generated in the Ge0.25Si0.75 film. At the same time, if the light penetration depth is sufficiently large, so that light penetrates into both the deposited layers and the near-surface region in the Si substrate, a positive SPV is observed within time intervals exceeding 10–20 мs after the light pulse terminates. It is also found that the saturation of the a-Si layer in the a-Si/Ge0.25Si0.75/c-Si heterostructure results in a substantial (by a factor of six) growth of the positive component of the SPV signal. This effect can be used while developing efficient solar components on the basis of a-Si/GexSi1−x/c-Si heterostructures.
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