Tellurium Effect on Degradation Stability of Semiinsulating Gallium Arsenide Crystals

  • N. I. Klyui V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • A. I. Liptuga V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V. B. Lozinskii V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • A. P. Oksanich M. Ostrogradskyi National University of Kremenchuk
  • S. E. Pritchin M. Ostrogradskyi National University of Kremenchuk
  • F. V. Fomovskii M. Ostrogradskyi National University of Kremenchuk
  • V. O. Yukhymchuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Keywords: degradation stability of crystals, Czochralski technique, internal mechanical stresses

Abstract

Initial untreated crystals of semiinsulating tellurium-compensated GaAs are shown to degrade considerably less after HF treatments in comparison with the corresponding specimens doped with chrome, which testifies to a substantial influence of the compensating impurity type on the substance degradation stability. Semiinsulating tellurium-compensated GaAs crystals preliminary treated in hydrogen plasma are also found to have higher degradation stability with
respect to the action of long-term high-frequency and microwave treatments in comparison with raw crystals.

References

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Published
2018-10-28
How to Cite
Klyui, N., Liptuga, A., Lozinskii, V., Oksanich, A., Pritchin, S., Fomovskii, F., & Yukhymchuk, V. (2018). Tellurium Effect on Degradation Stability of Semiinsulating Gallium Arsenide Crystals. Ukrainian Journal of Physics, 59(11), 1093. https://doi.org/10.15407/ujpe59.11.1093
Section
Solid matter

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