Spectral Parameters of Electron in a Multishell Semiconductor Cylindrical Nanotube with a Donor Impurity at Its Axis
DOI:
https://doi.org/10.15407/ujpe59.08.0819Keywords:
semiconductor nanotube, donor impurity, binding energy, oscillator strengthAbstract
The spectral parameters of an electron in the multishell semiconductor cylindrical nanotube with a donor impurity at its axis have been studied in the framework of the effective mass and rectangular potential models, by using the modified Bethe variational method. The electron-impurity binding energies and the oscillator strengths of intra-band optical quantum transitions have been analyzed as functions of the geometrical parameters of a combined nanotube composed of semiconductors GaAs and Al0.4Ga0.6As.
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