Bismuth Growth on Ge(111): Evolution of Morphological Changes from Nanocrystals to Films
DOI:
https://doi.org/10.15407/ujpe59.08.0805Keywords:
bismuth, germanium, thin film growth, scanning tunneling microscopyAbstract
The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole range of morphologies is observed for the Bi adsorbate such as individual atoms, two-dimensional nanoislands, three-dimensional nanocrystals and microcrystals, as well as an atomically flat film. The 3D nanostructuring is achieved through the Vollmer–Weber growth mode up to 10 atomic layers, followed by film’s flattening from 10 to 15 atomic layers. Annealed submonolayer films display individual Bi atoms incorporated into the uppermost atomic layer of Ge(111), as well as two-dimensional nanoislands of the first layer (2D nanostructuring). Thicker films display the coarsening after the annealing, compared to the as-deposited specimen, containing a diversity from nano- to microcrystals of bismuth.
References
Ph. Hofmann, Progr. in Surf. Sci. 81, 191 (2006).
https://doi.org/10.1016/j.progsurf.2006.03.001
Yu.M. Koroteev, G. Bihlmayer, J.E. Gayone et al., Phys. Rev. Lett. 93, 046403 (2004).
https://doi.org/10.1103/PhysRevLett.93.046403
Yu.M. Koroteev, G. Bihlmayer, E.V. Chulkov et al., Phys. Rev. B 77, 045428 (2008).
https://doi.org/10.1103/PhysRevB.77.045428
I. Gierz, T. Suzuki, E. Frantzeskakis et al., Phys. Rev. Lett. 103, 046803 (2009).
https://doi.org/10.1103/PhysRevLett.103.046803
S. Hatta, T. Aruga, Y. Ohtsubo et al., Phys. Rev. B 80, 113309 (2009).
https://doi.org/10.1103/PhysRevB.80.113309
Y. Ohtsubo, S. Hatta, K. Yaji et al., Phys. Rev. B 82, 201307(R) (2010).
A. Goriachko, P.V. Melnik, A. Shchyrba et al., Surf. Sci. 605, 1771 (2011).
https://doi.org/10.1016/j.susc.2011.06.004
N. Ballav, C. W¨ackerlin, D. Siewert et al., J. of Phys. Chem. Lett. 4, 2303 (2013).
https://doi.org/10.1021/jz400984k
W. Hieringer, K. Flechtner, A. Kretschmann et al., J. of the Amer. Chem. Soc. 133, 6206 (2011).
https://doi.org/10.1021/ja1093502
J.T. Sadowski, T. Nagao, S. Yaginuma et al., J. of Appl. Phys. 99, 014904 (2006).
https://doi.org/10.1063/1.2150598
T. Nagao, J.T. Sadowski, M. Saito et al., Phys. Rev. Lett. 93, 105501 (2004).
https://doi.org/10.1103/PhysRevLett.93.105501
Y. Oh, J. Seo, H. Suh et al., Surf. Sci. 602, 3352 (2008).
https://doi.org/10.1016/j.susc.2008.09.004
K. Miki, J.H.G. Owen, D.R. Bowler et al., Surf. Sci. 421, 397 (1999).
https://doi.org/10.1016/S0039-6028(98)00870-X
M. Naitoh, M. Takei, S. Nishigaki et al., Surf. Sci. 482-485, 1440 (2001).
https://doi.org/10.1016/S0039-6028(01)00860-3
J.H.G. Owen, D.R. Bowler, K. Miki et al., Surf. Sci. 596, 163 (2005).
https://doi.org/10.1016/j.susc.2005.09.012
A.G. Mark, J.A. Lipton-Duffin, J.M. MacLeod et al., J. of Phys.: Cond. Matter 17, 571 (2005).
https://doi.org/10.1088/0953-8984/17/4/001
H.K. Louwsma, H.J.W. Zandvliet, B.A.G. Kersten et al., Surf. Sci. 381, L594 (1997).
https://doi.org/10.1016/S0039-6028(97)00055-1
C. Cheng and K. Kunc, Phys. Rev. B 56, 10283 (1997).
https://doi.org/10.1103/PhysRevB.56.10283
Y. Ohtsubo, S. Hatta, M. Iwata et al., J. of Phys.: Cond. Matter 21, 405001 (2009).
https://doi.org/10.1088/0953-8984/21/40/405001
S. Hatta, Y. Ohtsubo, S. Miyamoto et al., Appl. Surf. Sci. 256, 1252 (2009).
https://doi.org/10.1016/j.apsusc.2009.05.079
I.V. Lyubinetsky, P.V. Melnik, N.G. Nakhodkin et al., Vacuum 46, 219 (1995).
https://doi.org/10.1016/0042-207X(94)00047-6
R.S. Becker, B.S. Swartzentruber, J.S. Vickers et al., Phys. Rev. B 39, 1633 (1989).
https://doi.org/10.1103/PhysRevB.39.1633
E.S. Hirschhorn, D.S. Lin, F.M. Leibsle et al., Phys. Rev. B 44, 1403 (1991).
https://doi.org/10.1103/PhysRevB.44.1403
G. Lee, H. Mai, I. Chizhov et al., J. of Vacuum Sci. and Techn. A 16, 1006 (1998).
https://doi.org/10.1116/1.581222
G. Lee, H. Mai, I. Chizhov et al., Surf. Sci. 463, 55 (2000).
https://doi.org/10.1016/S0039-6028(00)00596-3
I. Razado-Colambo, J. He, H.M. Zhang et al., Phys. Rev. B 79, 205410 (2009).
https://doi.org/10.1103/PhysRevB.79.205410
R.M. Feenstra, S. Gaan, G. Meyer et al., Phys. Rev. B 71, 125316 (2005).
https://doi.org/10.1103/PhysRevB.71.125316
M. Saito, T. Ohno, T. Miyazaki, Appl. Surf. Sci. 237, 80 (2004).
https://doi.org/10.1016/j.apsusc.2004.06.106
S. Yaginuma, T. Nagao, J.T. Sadowski, Surf. Sci. 547, L877 (2003).
https://doi.org/10.1016/j.susc.2003.10.015
M.G. Nakhodkin and M.I. Fedorchenko, Visn. Kyiv. Univ. Ser. Fiz. Mat. 4, 236 (2010).
Downloads
Published
How to Cite
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
