Effects of the Real-Space Transfer of Charge Carriers in the n-AlGaAs/GaAs Heterostructures with the Delta-Layers of Impurity in the Barriers

  • V. V. Vainberg Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • A. S. Pylypchuk Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • V. N. Poroshin Institute of Physics, Nat. Acad. of Sci. of Ukraine
  • O. G. Sarbey Institute of Physics, Nat. Acad. of Sci. of Ukraine
Keywords: heterostructures, quantum wells, lateral conduction, magnetoresistance, delta doping

Abstract

The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T < 20 K) and the dependence of the charge carrier mobility on the impurity concentration in the delta layers are related to the transport of carriers via two parallel channels with different mobilities, which are the channels formed by the structural and delta-layer quantum wells. The non-linear dependence of the current on the applied electric field strength is explained by the field-induced redistribution of charge carriers between these channels.

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Published
2018-10-24
How to Cite
Vainberg, V., Pylypchuk, A., Poroshin, V., & Sarbey, O. (2018). Effects of the Real-Space Transfer of Charge Carriers in the n-AlGaAs/GaAs Heterostructures with the Delta-Layers of Impurity in the Barriers. Ukrainian Journal of Physics, 59(7), 721. https://doi.org/10.15407/ujpe59.07.0721
Section
Solid matter